The Formation of Silicon Dioxide Films by TEOS Photochemical Decomposition

被引：0
|
作者：
Svetlichnyi A.M. [1 ]
Polyakov V.V. [1 ]
Varzarev Yu.N. [1 ]
机构：
[1] Taganrog State Radio Eng. University, Taganrog, 347928
来源：
Russian Microelectronics | 2001年 / 30卷 / 1期
关键词：
Oxygen; Silicon; Experimental Data; SiO2; Dioxide;
D O I：
10.1023/A:1009413623325
中图分类号：
学科分类号：
摘要：
Silicon dioxide films were obtained by TEOS photochemical decomposition. The specially designed setup is described. A possible decomposition mechanism in the vapor phase is outlined. The suggested kinetic model of SiO2 photochemical deposition from the TEOS-oxygen vapor phase fits experimental data for temperatures between 300 and 450°C.
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收藏
页码：22 / 26
页数：4
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