SIMULATION OF N-CHANNEL FIELD-EFFECT TRANSISTORS IN CIRCUIT ANALYSIS OF CMOS CIRCUITS

被引：0
|
作者：
MERCHANT, K [1 ]
机构：
[1] AEG TELEFUNKEN,HEILBRONN,FED REP GER
来源：
NACHRICHTENTECHNISCHE ZEITSCHRIFT | 1975年 / 28卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：133 / 137
页数：5
相关论文
共 50 条
  • [21] Soluble derivatives of perylene and naphthalene diimide for n-channel organic field-effect transistors
    Singh, Th. B.
    Erten, S.
    Guenes, S.
    Zafer, C.
    Turkmen, G.
    Kuban, B.
    Teoman, Y.
    Sariciftci, N. S.
    Icli, S.
    ORGANIC ELECTRONICS, 2006, 7 (06) : 480 - 489
  • [22] Organic n-Channel Field-Effect Transistors Based on Arylenediimide-Thiophene Derivatives
    Ponce Ortiz, Rocio
    Herrera, Helena
    Blanco, Raul
    Huang, Hui
    Facchetti, Antonio
    Marks, Tobin J.
    Zheng, Yan
    Segura, Jose L.
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2010, 132 (24) : 8440 - 8452
  • [23] N-channel field-effect transistors with an organic-inorganic layered perovskite semiconductor
    Matsushima, Toshinori
    Mathevet, Fabrice
    Heinrich, Benoit
    Terakawa, Shinobu
    Fujihara, Takashi
    Qin, Chuanjiang
    Sandanayaka, Atula S. D.
    Ribierre, Jean-Charles
    Adachi, Chihaya
    APPLIED PHYSICS LETTERS, 2016, 109 (25)
  • [24] N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates
    Ivana
    Subramanian, Sujith
    Owen, Man Hon Samuel
    Tan, Kian Hua
    Loke, Wan Khai
    Wicaksono, Satrio
    Yoon, Soon Fatt
    Yeo, Yee-Chia
    APPLIED PHYSICS EXPRESS, 2012, 5 (11)
  • [25] Perylene diimide copolymers with dithienothiophene and dithienopyrrole: Use in n-channel and ambipolar field-effect transistors
    Zhang, Shiming
    Wen, Yugeng
    Zhou, Weiyi
    Guo, Yunlong
    Ma, Lanchao
    Zhao, Xingang
    Zhao, Zhen
    Barlow, Stephen
    Marder, Seth R.
    Liu, Yunqi
    Zhan, Xiaowei
    JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 2013, 51 (07) : 1550 - 1558
  • [26] Charge-Transfer Complexes of Benzothienobenzothiophene with Tetracyanoquinodimethane and the n-Channel Organic Field-Effect Transistors
    Sato, Ryonosuke
    Dogishi, Masaki
    Higashino, Toshiki
    Kadoya, Tomofumi
    Kawamoto, Tadashi
    Mori, Takehiko
    JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 121 (12): : 6561 - 6568
  • [27] Noise degradation induced by γ rays on P- and N-channel junction field-effect transistors
    Manfredi, PF
    Ratti, L
    Re, V
    Speziali, V
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (05) : 1294 - 1299
  • [28] SILICON N-CHANNEL NORMALLY-OFF INSULATED-GATE FIELD-EFFECT TRANSISTORS
    OHWADA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (08) : 862 - +
  • [29] LiF/Al bilayer source and drain electrodes for n-channel organic field-effect transistors
    Hoshino, S
    Nagamatsu, S
    Chikamatsu, M
    Misaki, M
    Yoshida, Y
    Tanigaki, N
    Yase, K
    SYNTHETIC METALS, 2003, 137 (1-3) : 953 - 954
  • [30] Fluorine-containing diethynyl aryl derivatives for n-channel organic field-effect transistors
    Kashiwagi, Kimiaki
    Yasuda, Takeshi
    Tsutsui, Tetsuo
    CHEMISTRY LETTERS, 2007, 36 (10) : 1194 - 1195
12345