APPLICATION OF LOW-TEMPERATURE OPEN-TUBE ZN DIFFUSION IN INP/INGAAS(P) HBTS

被引:0
|
作者
LI, W [1 ]
PAN, H [1 ]
机构
[1] ACAD SINICA,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C175 / C175
页数:1
相关论文
共 50 条
  • [41] High-performance InGaAs/InP photodiodes on silicon using low-temperature wafer-bonding
    Yu, Qianhuan
    Wang, Ye
    Xie, Linli
    Nadri, Souheil
    Sun, Keye
    Zang, Jizhao
    Li, Qinglong
    Weikle, Robert M.
    Beling, Andreas
    2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2018,
  • [42] LOW-TEMPERATURE ZINC-DIFFUSION IN GAAS, INP AND GAINAS USING THE BOX-DIFFUSION TECHNIQUE
    SPRINGTHORPE, AJ
    SVILANS, MN
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 589 - 596
  • [43] Formation of the ferromagnetic semiconductor InMnP:Zn through low-temperature annealing by using Mn/InP:Zn bilayer
    Yoon Shon
    Sejoon Lee
    Im Taek Yoon
    Tae Won Kang
    Youngmin Lee
    Deuk Young Kim
    Chong S. Yoon
    Chang Soo Park
    Journal of the Korean Physical Society, 2012, 61 : 1065 - 1069
  • [44] Formation of the ferromagnetic semiconductor InMnP:Zn through low-temperature annealing by using Mn/InP:Zn bilayer
    Shon, Yoon
    Lee, Sejoon
    Yoon, Im Taek
    Kang, Tae Won
    Lee, Youngmin
    Kim, Deuk Young
    Yoon, Chong S.
    Park, Chang Soo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61 (07) : 1065 - 1069
  • [45] LIGHT PARTICLE DIFFUSION AT LOW-TEMPERATURE - APPLICATION TO POSITIVE MUON
    YAOUANC, A
    PHYSICS LETTERS A, 1982, 87 (08) : 423 - 425
  • [46] Low-temperature synthesis of Zn3P2 nanowire
    Bae, In-Tae
    Vasekar, Parag
    VanHart, Daniel
    Dhakal, Tara
    JOURNAL OF MATERIALS RESEARCH, 2011, 26 (12) : 1464 - 1467
  • [47] Low-temperature synthesis of Zn3P2 nanowire
    In-Tae Bae
    Parag Vasekar
    Daniel VanHart
    Tara Dhakal
    Journal of Materials Research, 2011, 26 : 1464 - 1467
  • [48] INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN AT LOW-TEMPERATURE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KURISHIMA, K
    MAKIMOTO, T
    KOBAYASHI, T
    ISHIBASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (2B): : L258 - L261
  • [49] DETERMINATION OF LOW-TEMPERATURE VOLUME DIFFUSION-COEFFICIENTS IN AN AL-ZN ALLOY
    NICHOLLS, AW
    JONES, IP
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (07) : 671 - 676
  • [50] METAL-P+-N ENHANCED SCHOTTKY BARRIERS ON (100) INP FORMED BY AN OPEN TUBE DIFFUSION TECHNIQUE
    GUALTIERI, GJ
    SCHWARTZ, GP
    ZYDZIK, GJ
    VANUITERT, LG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) : 1425 - 1429