DEEP LEVELS OF THERMAL DEFECTS IN HIGH-RESISTIVITY ULTRAPURE N-TYPE SILICON

被引：0

作者：

VERBITSKAYA, EM

EREMIN, VK

IVANOV, AM

STROKAN, NB

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 11期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The thermal stability of Si, grown by the zone melting and Czochralski methods and, consequently, differing in oxygen and carbon concentrations, was compared. The investigation was carried out in a largely neglected range of temperatures (less than or similar to 1000-degrees-C) and short heat-treatment times (from 1-2 h to a few tens of milliseconds). The spectra of deep levels were investigated by the DLTS method.

引用

页码：1101 / 1106

页数：6

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