SLOW RELAXATION OF THE CURRENT IN THE CASE OF TUNNEL CHARGING OF DEEP LEVELS IN A SEMICONDUCTOR WITH A SURFACE-BARRIER STRUCTURE

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作者：
LITOVSKII, RN
LYSENKO, VS
RUDENKO, TE
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 05期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：552 / 556
页数：5
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