METHOD FOR DETERMINATION OF THE PARAMETERS OF IMPURITY CENTERS IN A SEMICONDUCTOR FROM THE RELAXATION OF THE REVERSE CURRENT IN SURFACE-BARRIER STRUCTURES AS APPLIED TO GaAs.

被引：0

作者：

Tsarenkov, B.V.

Gol'dberg, Yu.A.

Posse, E.A.

Shulinskaya, M.M.

机构：

来源：

| 1973年 / 6卷 / 12期

关键词：

SEMICONDUCTING MATERIALS - Impurities;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The anomalous relaxation of the reverse current in metal-semiconductor Au-n-GaAs surface barrier structures was studied to determine the relationships that govern this process and to measure the characteristic relaxation time. The physical meaning of the relaxation time of the reverse current was found by measuring the relaxation of the capacitance in order to determine the time constant of the ionization of deep impurity centers. The data on the relaxation of the reverse current were used to determine the ionization energy and the carrier-capture cross section of various types of impurity center in crystals of n-type GaAs.

引用

页码：2003 / 2006

共 20 条

[1] METHOD FOR DETERMINATION OF PARAMETERS OF IMPURITY CENTERS IN A SEMICONDUCTOR FROM RELAXATION OF REVERSE CURRENT IN SURFACE-BARRIER STRUCTURES AS APPLIED TO GAAS
TSARENKOV, BV
GOLDBERG, YA
POSSE, EA
SHULINSKAYA, MM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (12): : 2003 - 2006
[2] THERMIONIC REVERSE CURRENT IN GAAS SURFACE-BARRIER STRUCTURES
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POSSE, EA
TSARENKOV, BV
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (03): : 266 - 268
[3] INVESTIGATION OF RELAXATION OF CAPACITANCE OF SURFACE-BARRIER STRUCTURES AND DETERMINATION OF PARAMETERS OF IMPURITY ATOMS IN N-TYPE GAAS
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[4] REVERSE CURRENT AND ELECTRICAL BREAKDOWN OF GAAS SURFACE-BARRIER STRUCTURES
GOLDBERG, YA
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (12): : 1359 - 1363
[5] REVERSE CURRENT AND ELECTRICAL BREAKDOWN OF GaAs SURFACE-BARRIER STRUCTURES.
Gol'dberg, Yu.A.
L'vova, T.V.
Tsarenkov, B.V.
[J]. Soviet physics. Semiconductors, 1981, 15 (12): : 1359 - 1363
[6] SLOW RELAXATION OF THE NONEQUILIBRIUM CONDUCTIVITY OF SURFACE-BARRIER SEMICONDUCTOR STRUCTURES
ORESHKIN, PT
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ZUBKOV, MV
PATRIN, SV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 941 - 942
[7] SLOW RELAXATION OF THE NONEQUILIBRIUM CONDUCTIVITY OF SURFACE-BARRIER SEMICONDUCTOR STRUCTURES.
Oreshkin, P.T.
Klochkov, A.Ya.
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[J]. Soviet physics. Semiconductors, 1984, 18 (08): : 941 - 942
[8] THE MOTION OF DEEP DONOR CENTERS IN REVERSE BIASED NORMAL-GAAS SURFACE-BARRIER DIODES
PEARTON, SJ
TAVENDALE, AJ
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (01): : K75 - K78
[9] Reverse current in metal/n-AlxGa1-xSb surface-barrier structures
Anisimov O.V.
Germogenov V.P.
Pozolotin V.A.
[J]. Russian Physics Journal, 1998, 41 (12) : 1215 - 1221
[10] SLOW RELAXATION OF THE CURRENT IN THE CASE OF TUNNEL CHARGING OF DEEP LEVELS IN A SEMICONDUCTOR WITH A SURFACE-BARRIER STRUCTURE
LITOVSKII, RN
LYSENKO, VS
RUDENKO, TE
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 552 - 556

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