REVERSE CURRENT AND ELECTRICAL BREAKDOWN OF GaAs SURFACE-BARRIER STRUCTURES.

被引：0
|
作者：
Gol'dberg, Yu.A.
L'vova, T.V.
Tsarenkov, B.V.
机构：
来源：
Soviet physics. Semiconductors | 1981年 / 15卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A study was made of the dependence of the reverse current I//r on the voltage U//r applied to surface-barrier structures made of GaAs with an electron density n equals 10**1**5-10**1**8 cm** minus **3, in the temperature range 200-30 200-370 degree K. The structures were fabricated by a chemical method and were of the mesa type. The aim was to study the mechanism of flow of the reverse current and of breakdown in GaAs surface-barrier structures in a wide range of temperatures and electron densities in a semiconductor. The results are presented and discussed.
引用
收藏
页码：1359 / 1363
相关论文
共 50 条
  • [1] REVERSE CURRENT AND ELECTRICAL BREAKDOWN OF GAAS SURFACE-BARRIER STRUCTURES
    GOLDBERG, YA
    LVOVA, TV
    TSARENKOV, BV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (12): : 1359 - 1363
  • [2] THERMIONIC REVERSE CURRENT IN GAAS SURFACE-BARRIER STRUCTURES
    GOLDBERG, YA
    POSSE, EA
    TSARENKOV, BV
    SHULGA, MI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (03): : 266 - 268
  • [3] MECHANISM OF ELECTRICAL BREAKDOWN OF GAP SURFACE-BARRIER STRUCTURES
    GOLDBERG, YA
    LVOVA, TV
    TSARENKOV, BV
    CHAIKINA, TS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 399 - 402
  • [4] MECHANISM OF THE FLOW OF THE FORWARD CURRENT IN SURFACE-BARRIER GaP STRUCTURES.
    Tsarenkov, B.V.
    Gol'dberg, Yu.A.
    Posse, E.A.
    [J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (12): : 1546 - 1550
  • [5] BREAKDOWN OF GAP SURFACE-BARRIER STRUCTURES
    GOLDBERG, YA
    GUSINSKII, GM
    LEMBERG, IK
    LVOVA, TV
    TSARENKOV, BV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (03): : 324 - 325
  • [6] ELECTRICAL PROPERTIES OF SN-N-GAAS SURFACE-BARRIER STRUCTURES
    GOLDBERG, YA
    POSSE, EA
    TSARENKO.BV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (03): : 408 - +
  • [7] Nitride Chemical Passivation of a GaAs (100) Surface: Effect on the Electrical Characteristics of Au/GaAs Surface-Barrier Structures
    Berkovits, V. L.
    L'vova, T. V.
    Ulin, V. P.
    [J]. SEMICONDUCTORS, 2011, 45 (12) : 1575 - 1579
  • [8] Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures
    V. L. Berkovits
    T. V. L’vova
    V. P. Ulin
    [J]. Semiconductors, 2011, 45 : 1575 - 1579
  • [9] METHOD FOR DETERMINATION OF PARAMETERS OF IMPURITY CENTERS IN A SEMICONDUCTOR FROM RELAXATION OF REVERSE CURRENT IN SURFACE-BARRIER STRUCTURES AS APPLIED TO GAAS
    TSARENKOV, BV
    GOLDBERG, YA
    POSSE, EA
    SHULINSKAYA, MM
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (12): : 2003 - 2006
  • [10] SLOW RELAXATION OF THE NONEQUILIBRIUM CONDUCTIVITY OF SURFACE-BARRIER SEMICONDUCTOR STRUCTURES.
    Oreshkin, P.T.
    Klochkov, A.Ya.
    Zubkov, M.V.
    Patrin, S.V.
    [J]. Soviet physics. Semiconductors, 1984, 18 (08): : 941 - 942
12345