Nitride Chemical Passivation of a GaAs (100) Surface: Effect on the Electrical Characteristics of Au/GaAs Surface-Barrier Structures

被引：11
|
作者：
Berkovits, V. L. [1 ]
L'vova, T. V. [1 ]
Ulin, V. P. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2011年 / 45卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
(100)GAAS SURFACE; INTERFACES; CHEMISTRY; CONTACTS; GAN;
D O I：
10.1134/S1063782611120037
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350 degrees C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazide-sulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.
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页码：1575 / 1579
页数：5
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