REVERSE CURRENT AND ELECTRICAL BREAKDOWN OF GaAs SURFACE-BARRIER STRUCTURES.

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Gol'dberg, Yu.A.
L'vova, T.V.
Tsarenkov, B.V.
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Soviet physics. Semiconductors | 1981年 / 15卷 / 12期
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A study was made of the dependence of the reverse current I//r on the voltage U//r applied to surface-barrier structures made of GaAs with an electron density n equals 10**1**5-10**1**8 cm** minus **3, in the temperature range 200-30 200-370 degree K. The structures were fabricated by a chemical method and were of the mesa type. The aim was to study the mechanism of flow of the reverse current and of breakdown in GaAs surface-barrier structures in a wide range of temperatures and electron densities in a semiconductor. The results are presented and discussed.
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页码：1359 / 1363
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