CARBON BACKGROUND IN P-BASED III-V SEMICONDUCTORS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING ETHYL-METALORGANIC SOURCES

被引：7
|
作者：
YOSHIMOTO, M
TANAKA, S
TSUJI, T
KURATA, H
NISHIMURA, K
MATSUNAMI, H
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)00780-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Electrical properties of InP, GaP, InGaP and AlGaP, grown by metalorganic molecular beam epitaxy(MOMBE) using ethyl-metalorganics (triethyl-indium, -gallium and -alluminum), are discussed in connection with the carbon background. More C atoms are incorporated into epilayers in the order of ALGaP, GaP and InP. The C atoms act as accepters in AlGaP and GaP epilayers, but they probably work as donors in InP. InGaP showed highly resistive or compensated possibly due to the amphoteric nature of C atoms.
引用
收藏
页码：241 / 245
页数：5
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