TIME-DEPENDENT BEHAVIOR OF A RESONANT-TUNNELING DIODE

被引:1
|
作者
ZOHTA, Y
机构
[1] Department of Engineering Science, Tokyo Engineering University, Hachioji, Tokyo 192, 1404-1, Katakura
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 11期
关键词
D O I
10.1103/PhysRevB.51.7307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By use of the improved optical model we have recently developed, it is shown that the resonant-tunneling current through a double-barrier structure is made up of two different components; one responds fast to an external signal and another component responds slowly to it. The fast component is carried by electrons that emit longitudinal-optical phonons during transport and reduce the time delay to pass through the structure, while the transverse energy of electrons responsible for the slow component is not sufficiently high to emit longitudinal-optical phonons in the well. The ratio of the two components depends on electron concentrations in the emitter of the double-barrier structure. © 1995 The American Physical Society.
引用
收藏
页码:7307 / 7309
页数:3
相关论文
共 50 条
  • [41] Effect of dissipation on the ac response of a resonant-tunneling diode
    Li, XQ
    PHYSICAL REVIEW B, 1996, 54 (19): : 14032 - 14036
  • [42] HOPF BIFURCATIONS AND HYSTERESIS IN RESONANT-TUNNELING DIODE CIRCUITS
    WALLIS, CR
    TEITSWORTH, SW
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) : 4443 - 4445
  • [43] REAL-TIME MONITORING OF RESONANT-TUNNELING DIODE GROWTH USING SPECTROSCOPIC ELLIPSOMETRY
    CELII, FG
    KAO, YC
    KATZ, AJ
    MOISE, TS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 733 - 739
  • [44] Novel open-system integral boundary conditions for the time-dependent Schrodinger equation for resonant-tunneling diodes
    Podlivaev, AI
    Elesin, VF
    Kateev, IY
    Krasheninnikov, AV
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2000, 11 : 111 - 123
  • [45] Real-time monitoring of resonant-tunneling diode growth using spectroscopic ellipsometry
    Celii, F.G.
    Kao, Y.-C.
    Katz, A.J.
    Moise, T.S.
    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1995, 13 (03): : 737 - 739
  • [46] Real-time monitoring of resonant-tunneling diode growth using spectroscopic ellipsometry
    Celii, F.G.
    Kao, Y.-C.
    Katz, A.J.
    Moise, T.S.
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1995, 13 (3 pt 1):
  • [47] ACTIVE-MODE LOCKING OF A DIODE-LASER BY A RESONANT-TUNNELING DIODE
    GRUMANN, E
    GOLUB, JE
    MATUSOVSKY, M
    ROSENBLUH, M
    APPLIED PHYSICS LETTERS, 1994, 64 (23) : 3095 - 3097
  • [48] AN APPROXIMATIVE ANALYSIS OF THE OUTPUT POWER OF A RESONANT-TUNNELING DIODE OSCILLATOR
    NILSEN, SM
    LUNDGREN, L
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1993, 6 (11) : 621 - 623
  • [49] Shot noise of sequential tunneling in a triple-barrier resonant-tunneling diode
    Yau, ST
    Sun, HB
    Edwards, PJ
    Lynam, P
    PHYSICAL REVIEW B, 1997, 55 (19): : 12880 - 12883
  • [50] Magnetotunneling spectroscopy of polarons in a quantum well of a resonant-tunneling diode
    Popov, V. G.
    Krishtop, V. G.
    Makarovskii, O. N.
    Henini, M.
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2010, 111 (02) : 220 - 224