TIME-DEPENDENT BEHAVIOR OF A RESONANT-TUNNELING DIODE

被引:1
|
作者
ZOHTA, Y
机构
[1] Department of Engineering Science, Tokyo Engineering University, Hachioji, Tokyo 192, 1404-1, Katakura
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 11期
关键词
D O I
10.1103/PhysRevB.51.7307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By use of the improved optical model we have recently developed, it is shown that the resonant-tunneling current through a double-barrier structure is made up of two different components; one responds fast to an external signal and another component responds slowly to it. The fast component is carried by electrons that emit longitudinal-optical phonons during transport and reduce the time delay to pass through the structure, while the transverse energy of electrons responsible for the slow component is not sufficiently high to emit longitudinal-optical phonons in the well. The ratio of the two components depends on electron concentrations in the emitter of the double-barrier structure. © 1995 The American Physical Society.
引用
收藏
页码:7307 / 7309
页数:3
相关论文
共 50 条
  • [31] Resonant-tunneling diode on the basis of silicon multilayer cathode
    Goncharuk, Nina M.
    2007 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2007, : 1602 - 1605
  • [32] QUANTUM HYDRODYNAMIC SIMULATION OF HYSTERESIS IN THE RESONANT-TUNNELING DIODE
    CHEN, ZX
    COCKBURN, B
    GARDNER, CL
    JEROME, JW
    JOURNAL OF COMPUTATIONAL PHYSICS, 1995, 117 (02) : 274 - 280
  • [33] Optical diagnostic monitoring of resonant-tunneling diode growth
    Celii, FG
    Moise, TS
    Kao, YC
    Katz, AJ
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (04) : 1064 - 1072
  • [34] Simulation of short Gunn diode with resonant-tunneling cathode
    Storozhenko, IP
    Prokhorov, ED
    Botsula, OV
    MSMW'04: FIFTH INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER, AND SUBMILLIMETER WAVES, SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 2004, : 549 - 551
  • [35] A novel oscillation circuit using a resonant-tunneling diode
    Muramatsu, N
    Okazaki, H
    Waho, T
    2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS, 2005, : 2341 - 2344
  • [36] GaAs/AlAs resonant-tunneling diode for subharmonic mixers
    Alkeev N.V.
    Averin S.V.
    Dorofeev A.A.
    Gladysheva N.B.
    Torgashin M.Yu.
    Russian Microelectronics, 2010, 39 (05) : 331 - 339
  • [37] SELF-CONSISTENT STUDY OF THE RESONANT-TUNNELING DIODE
    KLUKSDAHL, NC
    KRIMAN, AM
    FERRY, DK
    RINGHOFER, C
    PHYSICAL REVIEW B, 1989, 39 (11) : 7720 - 7735
  • [38] Waveguide Coupling of Resonant-Tunneling Diode Terahertz Oscillator
    Matsumoto, Hironori
    Suzuki, Safumi
    Asada, Masahiro
    Monnai, Yasuaki
    2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2018,
  • [39] Cylindrical Cavity Optimization for Resonant-Tunneling Diode Oscillators
    Jehn, Zoltan
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2022, 70 (05) : 2658 - 2667
  • [40] SHOT-NOISE CHARACTERISTICS OF A RESONANT-TUNNELING DIODE
    SHENG, HY
    CHUA, SJ
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (01) : 137 - 141