INFLUENCE OF IMPLANTATION OF COMPENSATING IMPURITY IONS ON THE OPTICAL-PROPERTIES OF N+-TYPE GAAS

An analysis is made of the reflection and dispersion spectra of surface plasmon-phonon polaritons in heavily doped n-type gallium arsenide bombarded with compensating O+ ions. The solution of the optimization problem is used to determine the implanted layer parameters from the reflection spectra in the adopted single-step approximation and a discrepancy is reported between the experimental values of the depth of the implanted layer and those predicted on the basis of the Lindhard-Scharff-Schiott theory. A good agreement is obtained between the results deduced from the spectra of external infrared reflection of light and the dispersion dependences of the surface polaritons when the charge is compensated completely in the implanted layer.