OPTICAL-PROPERTIES OF EXCITONS IN GAAS QUANTUM WIRES

被引:0
|
作者
RINALDI, R
CINGOLANI, R
FERRARA, M
MARTI, U
MARTIN, D
REINHART, FK
LAGE, H
HEITMANN, D
PLOOG, K
机构
[1] ECOLE POLYTECH FED LAUSANNE,CH-1007 LAUSANNE,SWITZERLAND
[2] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
[3] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY
来源
JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C5期
关键词
D O I
10.1051/jp4:1993572
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the result of a detailed spectroscopic investigation of the optical properties of excitons in rectangular (etched) and V-shaped (grown on non-planar substrates) GaAs quantum wires. High index excitonic transitions and strong polarization anisotropy of the optical spectra have been observed. The experimentally observed trasitions are in agreement with the theoretical evaluation of quantized energy levels based on the respective model potential.
引用
收藏
页码:347 / 350
页数:4
相关论文
共 50 条
  • [1] OPTICAL-PROPERTIES OF ETCHED GAAS/GAALAS QUANTUM WIRES AND DOTS
    MARZIN, JY
    IZRAEL, A
    BIROTHEAU, L
    [J]. SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 1091 - 1096
  • [2] DEVELOPMENT AND STUDY OF THE OPTICAL-PROPERTIES OF INGAAS/GAAS QUANTUM WIRES
    BERT, NA
    GUREVICH, SA
    GLADYSHEVA, LG
    KOGNOVITSKII, SO
    KOKHANOVSKII, SI
    KOCHNEV, IV
    NESTEROV, SI
    SKOPINA, VI
    SMIRNITSKII, VB
    TRAVNIKOV, VV
    TROSHKOV, SI
    USIKOV, AS
    [J]. SEMICONDUCTORS, 1994, 28 (09) : 895 - 898
  • [3] OPTICAL-PROPERTIES OF BARRIER-MODULATED INGAAS/GAAS QUANTUM WIRES
    GREUS, C
    ORTH, A
    DAIMINGER, F
    BUTOV, LV
    REINECKE, TL
    FORCHEL, A
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1992, 173 (01): : 323 - 330
  • [4] FABRICATION AND OPTICAL-PROPERTIES OF GAAS QUANTUM WIRES AND DOTS BY MOCVD SELECTIVE GROWTH
    ARAKAWA, Y
    NAGAMUNE, Y
    NISHIOKA, M
    TSUKAMOTO, S
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 1082 - 1088
  • [5] QUANTUM WELL WIRES - ELECTRICAL AND OPTICAL-PROPERTIES
    ARORA, VK
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (15): : 3011 - 3016
  • [6] FABRICATION AND OPTICAL-PROPERTIES OF QUANTUM DOTS AND WIRES
    ANDREWS, SR
    ARNOT, HEG
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (04) : 433 - 439
  • [7] TRANSPORT AND OPTICAL-PROPERTIES OF SEMICONDUCTOR QUANTUM WIRES
    FORCHEL, A
    MENSCHIG, A
    MAILE, BE
    LEIER, H
    GERMANN, R
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 444 - 450
  • [8] OPTICAL-PROPERTIES OF FREESTANDING SILICON QUANTUM WIRES
    SANDERS, GD
    CHANG, YC
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (20) : 2525 - 2527
  • [9] FABRICATION OF GAAS QUANTUM WIRES BY METALORGANIC MOLECULAR-BEAM EPITAXY AND THEIR OPTICAL-PROPERTIES
    NOMURA, Y
    GOTO, S
    MORISHITA, Y
    MATSUYAMA, I
    KATAYAMA, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 332 - 335
  • [10] OPTICAL-PROPERTIES OF IN-SITU GROWN GAAS QUANTUM WIRES BY MOCVD SELECTIVE GROWTH
    ARAKAWA, Y
    NAGAMUNE, Y
    TSUKAMOTO, S
    NISHIOKA, M
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (127): : 199 - 203