A STUDY OF DEEP-LEVEL DEFECTS IN METALORGANIC VAPOR-PHASE-EPITAXY-GROWN ZNSE ON GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：4
|
作者：
WANG, YH
LI, SS
机构：
[1] Department of Electrical Engineering, University of Florida, Gainesville
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期
关键词：
D O I：
10.1063/1.346476
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Deep-level defects in Li+-implanted ZnSe epilayer grown by metalorganic vapor-phase epitaxy (MOVPE) on a GaAs substrate have been characterized by using the deep-level transient spectroscopy method under different post-implantation annealing conditions. Four electron traps with energy levels of Ec-0.3, 0.33, 0.55, and 1.02 eV and one hole trap with an energy level of Ev+0.23 eV were detected. Possible physical origins and formation mechanisms for these defects were discussed using the defect model proposed by Myles and Sankey [Phys. Rev. B 29, 6810 (1984)]. The results showed that interdiffusion between the ZnSe/GaAs heterointerface plays an important role on the formation of native defects in the MOVPE-grown ZnSe epitaxial films on the GaAs substrate.
引用
收藏
页码：2535 / 2537
页数：3
相关论文
共 50 条
  • [1] DEEP-LEVEL TRANSIENT SPECTROSCOPY OF NITROGEN-DOPED ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    GOTO, H
    TANOI, T
    TAKEMURA, M
    IDO, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (7A): : L827 - L829
  • [2] Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy
    Gelczuk, L.
    Stokowski, H.
    Dabrowska-Szata, M.
    Kudrawiec, R.
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (18)
  • [3] DEEP-LEVEL TRANSIENT SPECTROSCOPY ASSESSMENT OF SILICON CONTAMINATION IN ALGAAS LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    CALLEJA, E
    SANCHEZ, F
    MUNOZ, E
    GIBART, P
    POWELL, A
    ROBERTS, JS
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (08) : 1017 - 1022
  • [4] INTERPRETATION OF DEEP-LEVEL OPTICAL SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY DATA - APPLICATION TO IRRADIATION DEFECTS IN GAAS
    LOUALICHE, S
    NOUAILHAT, A
    GUILLOT, G
    LANNOO, M
    [J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5822 - 5834
  • [5] Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy
    Onabe, K
    Wu, J
    Katayama, R
    Zhao, FH
    Nagayama, A
    Shiraki, Y
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 180 (01): : 15 - 19
  • [6] Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy
    [J]. Onabe, K., 2000, Wiley-VCH Verlag Berlin GmbH, Weinheim, Germany (180):
  • [7] METHODS FOR REDUCING DEEP-LEVEL EMISSIONS FROM ZNSE GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    AKRAM, S
    BHAT, I
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) : 515 - 519
  • [8] Deep-level transient spectroscopy and cathodoluminescence of CdSe/ZnSe QD structures grown on GaAs(100) by MBE
    Litvinov, VG
    Kozlovsky, VI
    Sadofyev, YG
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 229 (01): : 513 - 517
  • [9] DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
    BOSACCHI, A
    GOMBIA, E
    MADELLA, M
    MOSCA, R
    FRANCHI, S
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 400 - 403
  • [10] Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates
    Syshchyk, O.
    Hsu, B.
    Yu, H.
    Motsnyi, V.
    Vais, A.
    Kunert, B.
    Mols, Y.
    Alcotte, R.
    Puybaret, R.
    Waldron, N.
    Soussan, P.
    Boulenc, P.
    Karve, G.
    Simoen, E.
    Collaert, N.
    Puers, B.
    Van Hoof, C.
    [J]. PHYSICAL REVIEW APPLIED, 2020, 14 (02):
12345