Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates

被引：8

作者：

Syshchyk, O. ^{[1
,2
]}

Hsu, B. ^{[2
,3
]}

Yu, H. ^{[2
]}

Motsnyi, V. ^{[2
]}

Vais, A. ^{[2
]}

Kunert, B. ^{[2
]}

Mols, Y. ^{[2
]}

Alcotte, R. ^{[2
]}

Puybaret, R. ^{[2
]}

Waldron, N. ^{[2
]}

Soussan, P. ^{[2
]}

Boulenc, P. ^{[2
]}

Karve, G. ^{[2
]}

Simoen, E. ^{[2
]}

Collaert, N. ^{[2
]}

Puers, B. ^{[1
]}

Van Hoof, C. ^{[1
,2
]}

机构：

[1] Katholieke Univ Leuven, Elect Engn Dept ESAT, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium

[2] Interuniv Microelect Ctr IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven, Phys Dept, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium

来源：

PHYSICAL REVIEW APPLIED | 2020年 / 14卷 / 02期

基金：

美国国家卫生研究院;

关键词：

ELECTRICAL-PROPERTIES; SURFACE; TRAPS; RECOMBINATION; CAPACITANCE; INTERFACE; STATES; BULK; DISLOCATIONS; PASSIVATION;

D O I：

10.1103/PhysRevApplied.14.024093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monolithically integrated GaAs p-i-n diodes are demonstrated on 300-mm Si (001) substrates using a nanoridge-engineering approach. Deep-level transient spectroscopy (DLTS) is used to perform defect analysis for nanoridge and planar GaAs diodes. The point defect, EL2 with N-T similar or equal to 3 x 10(14) cm(-3), is observed for nanoridge p-i-n diodes. A methodology is developed to extract the surface-state density (N-SS) directly from the DLTS spectrum. GaAs nanoridge diodes show N-SS similar or equal to( ) 2 x 10(13) cm(-2) compared to planar diode approximately 6.5 x 10(12) cm(-2). A clear correlation is observed between dark current and defect density. An investigation on the impact of an in situ and ex situ passivation layers on the leakage current reduction is performed for GaAs p-i-n diodes.

引用

页数：12

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