THE DEVELOPMENT OF SOR LITHOGRAPHY TECHNOLOGY

被引:0
|
作者
ISHIHARA, S [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LARGE SCALE INTEGRAT LABS, MICROFABRICAT TECHNOL LAB, CHIYODA KU, TOKYO 10019, JAPAN
来源
NTT REVIEW | 1995年 / 7卷 / 04期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
NTT's synchrotron x-ray lithography technology has achieved the target performance feasible for future micro-fabrication, which is now available for test LSI fabrication. This paper reviews NTT Laboratories' research and development of x-ray lithography during the last ten years since the application of synchrotron orbital radiation (SOR). The historical background of x-ray lithography research, NTT's research programs on synchrotron x-ray lithography (SOR lithography), and the current status of the research are overviewed. The paper concludes with a report on the achieved performance of the technology.
引用
收藏
页码:18 / 25
页数:8
相关论文
共 50 条
  • [1] SOR LITHOGRAPHY BEAMLINE
    KANEKO, T
    SAITOH, Y
    ITABASHI, S
    YOSHIHARA, H
    [J]. NTT REVIEW, 1990, 2 (04): : 86 - 91
  • [2] RESIST PROCESS FOR SOR LITHOGRAPHY
    DEGUCHI, K
    HORIUCHI, T
    TANAKA, A
    YOSHIKAWA, A
    [J]. NTT REVIEW, 1990, 2 (04): : 108 - 115
  • [3] Development of MOEMS technology in maskless lithography
    Smith, David
    Klenk, Dieter
    [J]. EMERGING DIGITAL MICROMIRROR DEVICE BASED SYSTEMS AND APPLICATIONS, 2009, 7210
  • [4] Research development of laser lithography technology
    Deng, Changmeng
    Geng, Yongyou
    Wu, Yiqun
    [J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2012, 41 (05): : 1223 - 1231
  • [5] Development of controlled nanosphere lithography technology
    Artem A. Osipov
    Alina E. Gagaeva
    Anastasiya B. Speshilova
    Ekaterina V. Endiiarova
    Polina G. Bespalova
    Armenak A. Osipov
    Ilya A. Belyanov
    Kirill S. Tyurikov
    Irina A. Tyurikova
    Sergey E. Alexandrov
    [J]. Scientific Reports, 13
  • [6] Development of controlled nanosphere lithography technology
    Osipov, Artem A. A.
    Gagaeva, Alina E. E.
    Speshilova, Anastasiya B. B.
    Endiiarova, Ekaterina V. V.
    Bespalova, Polina G. G.
    Osipov, Armenak A. A.
    Belyanov, Ilya A. A.
    Tyurikov, Kirill S. S.
    Tyurikova, Irina A. A.
    Alexandrov, Sergey E. E.
    [J]. SCIENTIFIC REPORTS, 2023, 13 (01)
  • [7] A 0.25-MU-M BICMOS TECHNOLOGY USING SOR X-RAY-LITHOGRAPHY
    KONAKA, S
    KYURAGI, H
    KOBAYASHI, T
    DEGUCHI, K
    YAMAMOTO, E
    OHKI, S
    YAMAMOTO, Y
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (03) : 355 - 361
  • [8] AN X-RAY STEPPER FOR SOR LITHOGRAPHY
    ISHIHARA, S
    KANAI, M
    UNE, A
    SUZUKI, M
    [J]. NTT REVIEW, 1990, 2 (04): : 92 - 100
  • [9] NANOSTRUCTURE PATTERNING WITH SOR X-RAY-LITHOGRAPHY
    CHLEBEK, J
    HUBER, HL
    OERTEL, HK
    REIMER, K
    [J]. MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) : 227 - 230
  • [10] A VERTICAL X-RAY STEPPER FOR SOR LITHOGRAPHY
    FUKUDA, M
    SUZUKI, M
    KANAI, M
    SHIBAYAMA, A
    TSUYUZAKI, H
    ISHIHARA, S
    [J]. NTT REVIEW, 1995, 7 (04): : 33 - 39