THE DEVELOPMENT OF SOR LITHOGRAPHY TECHNOLOGY

被引：0
|
作者：
ISHIHARA, S [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LARGE SCALE INTEGRAT LABS, MICROFABRICAT TECHNOL LAB, CHIYODA KU, TOKYO 10019, JAPAN
来源：
NTT REVIEW | 1995年 / 7卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
NTT's synchrotron x-ray lithography technology has achieved the target performance feasible for future micro-fabrication, which is now available for test LSI fabrication. This paper reviews NTT Laboratories' research and development of x-ray lithography during the last ten years since the application of synchrotron orbital radiation (SOR). The historical background of x-ray lithography research, NTT's research programs on synchrotron x-ray lithography (SOR lithography), and the current status of the research are overviewed. The paper concludes with a report on the achieved performance of the technology.
引用
收藏
页码：18 / 25
页数：8
相关论文
共 50 条
  • [21] Lithography for semiconductor technology
    Ngo, C
    Rosilio, C
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 131 (1-4): : 22 - 29
  • [22] 0.25 MU-M IMAGING BY SOR X-RAY-LITHOGRAPHY
    WALDO, WG
    YANOF, AW
    [J]. SOLID STATE TECHNOLOGY, 1991, 34 (12) : 29 - 31
  • [23] 32nm node technology development using interference immersion lithography
    Sewell, H
    McCafferty, D
    Markoya, L
    Hendrickx, E
    Hermans, J
    Ronse, K
    [J]. Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 491 - 501
  • [24] The latest development of Micro-nano manufacturing of next generation lithography technology
    Zhang, Zhongming
    Wang, Hongxue
    [J]. PROCEEDINGS OF THE 5TH INTERNATIONAL CONFERENCE ON INFORMATION ENGINEERING FOR MECHANICS AND MATERIALS, 2015, 21 : 1499 - 1502
  • [25] A VERTICAL X-Y STAGE FOR X-RAY-LITHOGRAPHY USING SOR
    UCHIDA, N
    TAKAHASHI, Y
    YAMADA, N
    HIROKAWA, T
    [J]. BULLETIN OF THE JAPAN SOCIETY OF PRECISION ENGINEERING, 1988, 22 (02): : 102 - 108
  • [26] X-RAY-LITHOGRAPHY BY SYNCHROTRON RADIATION OF THE SOR-RING STORAGE RING
    ARITOME, H
    MATSUI, S
    MORIWAKI, K
    NAMBA, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1939 - 1941
  • [27] Latest Trends in Lithography Technology
    Nakasugi, Tetsuro
    [J]. JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS, 2010, 55 (11) : 769 - 775
  • [28] Mask technology for EUV lithography
    Bujak, M
    Burkhart, S
    Cerjan, C
    Kearney, P
    Moore, C
    Prisbrey, S
    Sweeney, D
    Tong, W
    Vernon, S
    Walton, C
    Warrick, A
    Weber, F
    Wedowski, M
    Wilhelmsen, K
    Bokor, J
    Jeong, S
    Cardinale, G
    Ray-Chaudhuri, A
    Stivers, A
    Tenjil, E
    Yan, P
    Hector, S
    Nguyen, K
    [J]. 15TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS '98, 1999, 3665 : 30 - 39
  • [29] Mask technology for optical lithography
    Cummings, KD
    Schellenberg, FM
    [J]. JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2004, 3 (02): : 202 - 202
  • [30] Fast inverse lithography technology
    Abrams, Daniel S.
    Pang, Linyong
    [J]. OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 2006, 6154 : U1012 - U1020
12345