共 50 条
- [45] Study of edge effects in the breakdown process of p+ on n-bulk silicon diodes [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 439 (2-3): : 262 - 269
- [46] Electrical and low frequency noise properties of 4H-SiC p+-n-n+ junction diodes [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (10): : 2551 - 2557