COMMENTS ON THE THERMOELECTRIC PROPERTIES OF PRESSURE-SINTERED SI0.8GE0.2 THERMOELECTRIC ALLOYS

被引：19

作者：

ROWE, DM ^{[1
]}

FU, LW ^{[1
]}

WILLIAMS, SGK ^{[1
]}

机构：

[1] TSHINGUA UNIV, INST MICROELECTR, BEIJING, PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.352764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recent results of C. B. Vining, W. Laskow, J. O. Hanson, R. R. Van der Beck, and P. D. Gorsuch [J. Appl. Phys. 69, 4333 (1991)] regarding the effect of grain size on the thermoelectric figure of merit of heavily doped p-type silicon germanium alloys are compared to earlier results on similar materials. The data confirm that the room-temperature figure-of-merit is significantly increased in materials with a small grain size.

引用

页码：4683 / 4685

页数：3

共 50 条

[41] Growth and characterization of Si1−xGetx QDs on Si/Si0.8Ge0.2 layer
Taek Sung Kim
Yeon-Ho Kil
Hyeon Deok Yang
Jong-Han Yang
Woong-Ki Hong
Sukill Kang
Tae Soo Jeong
Kyu-Hwan Shim
Electronic Materials Letters, 2012, 8 : 559 - 563
[42] Growth and Characterization of Si1-xGex QDs on Si/Si0.8Ge0.2 Layer
Kim, Taek Sung
Kil, Yeon-Ho
Yang, Hyeon Deok
Yang, Jong-Han
Hong, Woong-Ki
Kang, Sukill
Jeong, Tae Soo
Shim, Kyu-Hwan
ELECTRONIC MATERIALS LETTERS, 2012, 8 (06) : 559 - 563
[43] DETERMINATION OF THE DENSITIES OF GAP STATES IN HYDROGENATED POLYCRYSTALLINE SI AND SI0.8GE0.2 FILMS
CAO, M
KING, TJ
SARASWAT, KC
APPLIED PHYSICS LETTERS, 1992, 61 (06) : 672 - 674
[44] Solid state reaction synthesis and thermoelectric properties of Ag-doped Mg2Si0.8Ge0.2
Liu, Q. Z.
Zhang, L. M.
Shen, Q.
Jiang, H. Y.
Wang, C. B.
COMPOSITE MATERIALS IV, 2006, 313 : 177 - 182
[45] Deep levels in multilayer structures of Si/Si0.8Ge0.2 grown by low-pressure chemical vapor deposition
Tokuda, Y
Shirai, K
PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS III - ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2004, 799 : 145 - 150
[46] Effect of Ti interlayer on the formation of epitaxial NiSiGe on strained Si0.8Ge0.2
Hou, C.
Ping, Y.
Zhang, B.
Yu, W.
Xue, Z.
Wei, X.
Gao, H.
Peng, W.
Di, Z.
Zhang, M.
2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2014, : 202 - 205
[47] Mobility of holes in a Si/Si0.8Ge0.2/Si metal oxide semiconductor field effect transistor
Ansaripour, Ghassem
THIN SOLID FILMS, 2010, 518 (19) : 5599 - 5603
[48] Optical Property of Si0.8Ge0.2/Si Multi- Layer Grown by using RPCVD
Kim, T. S.
Kil, Y. -H.
Shin, M. I.
Jeong, T. S.
Kang, S.
Choi, C. -J.
Shim, K. H.
SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 211 - 219
[49] Effects of annealing temperature on the characteristics of solicate/HfO2 insulator formed on the p-Si/Si0.8Ge0.2 and p-Si/Si0.8Ge0.2/intrinsic-Si (20A) substrates
Jeong, SH
Roh, Y
Lee, NE
Yang, CW
SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4): : 258 - 263
[50] Crystalline ripples at the surface of ion eroded strained Si0.8Ge0.2 epilayers
Kanjilal, A.
Prucnal, S.
Minniti, M.
Skorupa, W.
Helm, M.
Facsko, S.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)

← 1 2 3 4 5 →