COMMENTS ON THE THERMOELECTRIC PROPERTIES OF PRESSURE-SINTERED SI0.8GE0.2 THERMOELECTRIC ALLOYS

被引：19

作者：

ROWE, DM ^{[1
]}

FU, LW ^{[1
]}

WILLIAMS, SGK ^{[1
]}

机构：

[1] TSHINGUA UNIV, INST MICROELECTR, BEIJING, PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.352764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recent results of C. B. Vining, W. Laskow, J. O. Hanson, R. R. Van der Beck, and P. D. Gorsuch [J. Appl. Phys. 69, 4333 (1991)] regarding the effect of grain size on the thermoelectric figure of merit of heavily doped p-type silicon germanium alloys are compared to earlier results on similar materials. The data confirm that the room-temperature figure-of-merit is significantly increased in materials with a small grain size.

引用

页码：4683 / 4685

页数：3

共 50 条

[31] Thermoelectric properties of sintered SiC/Si/Ag thermoelectric semiconductor
Inai, H
Okamoto, Y
Morimoto, J
XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98, 1998, : 578 - 581
[32] Investigation of Nanostructured Thermoelectric Material Si0.8Ge0.2P0.022 for Application in Multisectional Legs of Thermoelectric Elements
Shtern, Yu. I.
Sherchenkov, A. A.
Babich, A. V.
Rogachev, M. S.
JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2016, 8 (04)
[33] Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation
Zhang, B.
Yu, W.
Zhao, Q. T.
Buca, D.
Hollaender, B.
Hartmann, J. M.
Zhang, M.
Wang, X.
Mantl, S.
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (07) : H261 - H263
[34] Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures
Shao, Lin
Wang, Y. Q.
Swadener, J. G.
Nastasi, M.
Thompson, Phillip E.
Theodore, N. David
APPLIED PHYSICS LETTERS, 2008, 92 (06)
[35] Visibility of misfit dislocations at the interface of strained Si/Si0.8Ge0.2 by EBIC
Yuan, X. L.
Chen, J.
Ri, S. G.
Ito, S.
Sekiguchi, T.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8, 2007, 4 (08): : 3030 - +
[36] Effect of annealing on the nanoscratch behavior of multilayer Si0.8Ge0.2/Si films
Lian, Derming
APPLIED SURFACE SCIENCE, 2010, 257 (03) : 911 - 916
[37] Enhanced phase stability and morphological stability of Ni(Si,Ge) on strained Si0.8Ge0.2
Seger, J
Zhang, SL
THIN SOLID FILMS, 2003, 429 (1-2) : 216 - 219
[38] B- and P-doped Si0.8Ge0.2 thin film deposited by helicon sputtering for the micro-thermoelectric gas sensor
Tajima, Kazuki
Shin, Woosuck
Nishibori, Maiko
Murayama, Norimitsu
Itoh, Toshio
Izu, Noriya
Matsubara, Ichiro
ELECTROCERAMICS IN JAPAN IX, 2006, 320 : 99 - 102
[39] Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films
Chang, Yuan-Ming
Dai, Ching-Liang
Cheng, Tsung-Chieh
Hsu, Che-Wei
APPLIED SURFACE SCIENCE, 2008, 254 (10) : 3105 - 3109
[40] Reaction of Ni and Si0.8Ge0.2• phase formation and thermal stability
Chamirian, O
Lauwers, A
Kittl, JA
Van Dal, M
De Potter, M
Lindsay, R
Maex, K
MICROELECTRONIC ENGINEERING, 2004, 76 (1-4) : 297 - 302

← 1 2 3 4 5 →