COMMENTS ON THE THERMOELECTRIC PROPERTIES OF PRESSURE-SINTERED SI0.8GE0.2 THERMOELECTRIC ALLOYS

被引：19
|
作者：
ROWE, DM [1 ]
FU, LW [1 ]
WILLIAMS, SGK [1 ]
机构：
[1] TSHINGUA UNIV, INST MICROELECTR, BEIJING, PEOPLES R CHINA
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期
关键词：
D O I：
10.1063/1.352764
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The recent results of C. B. Vining, W. Laskow, J. O. Hanson, R. R. Van der Beck, and P. D. Gorsuch [J. Appl. Phys. 69, 4333 (1991)] regarding the effect of grain size on the thermoelectric figure of merit of heavily doped p-type silicon germanium alloys are compared to earlier results on similar materials. The data confirm that the room-temperature figure-of-merit is significantly increased in materials with a small grain size.
引用
收藏
页码：4683 / 4685
页数：3
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