FORMATION OF DEEP COMPLEXES IN ZNSE DURING OHMIC CONTACT ANNEALING

被引：7
|
作者：
HEUKEN, M
SOLLNER, J
GUIMARAES, FEG
MARQUARDT, K
HEIME, K
机构：
[1] Institut für Halbleitertechnik, RWTH Aachen, Germany, W-5100 Aachen
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 14期
关键词：
D O I：
10.1063/1.107214
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation of ohmic contacts to n-ZnSe grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs was investigated by current-voltage and photoluminescence (PL) measurements. Annealing of the contacts even at temperatures as low as 300-degrees-C causes the formation of deep complexes with PL emissions at 2.25 - 2.35 and 1.97 eV. These centers degrade the electrical and optical properties of the ZnSe epitaxial layers. The effects of strain and Ga outdiffusion on ohmic contact properties was investigated in ZnSe layers of various thicknesses. Due to a gallium-doped ZnSe transition layer at the substrate heterointerface ohmic contacts are easily formed only on thin layers.
引用
收藏
页码：1694 / 1696
页数：3
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