LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF INSITU BORON-DOPED POLYSILICON

被引：24

作者：

MARITAN, CM ^{[1
]}

BERNDT, LP ^{[1
]}

TARR, NG ^{[1
]}

BULLERWELL, JM ^{[1
]}

JENKINS, GM ^{[1
]}

机构：

[1] PROC TECHNOL LTD,OROMOCTO E2V 2H2,NB,CANADA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 07期

关键词：

D O I：

10.1149/1.2096132

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1793 / 1796

页数：4

共 50 条

[1] MICROSTRUCTURE OF BORON-DOPED SILICON LAYERS PREPARED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
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OUSTRY, A
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[J]. THIN SOLID FILMS, 1987, 150 (01) : 69 - 82
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[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 4806 - 4811
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[J]. THIN SOLID FILMS, 1991, 202 (01) : 97 - 103
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[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 : 65 - 80
[6] EFFECTS OF INSITU PLASMA SUPPLY IN UNDOPED AND BORON-DOPED POLYCRYSTALLINE SILICON BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION AT 500-840-DEGREES-C
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[7] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C296 - C296
[8] SOLID-PHASE EPITAXIAL REGROWTH OF BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 611 - 613
[9] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF LOW INSITU PHOSPHORUS DOPED SILICON THIN-FILMS
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[10] POLYSILICON GROWTH-KINETICS IN A LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION REACTOR
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