LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF INSITU BORON-DOPED POLYSILICON

被引：24

作者：

MARITAN, CM ^{[1
]}

BERNDT, LP ^{[1
]}

TARR, NG ^{[1
]}

BULLERWELL, JM ^{[1
]}

JENKINS, GM ^{[1
]}

机构：

[1] PROC TECHNOL LTD,OROMOCTO E2V 2H2,NB,CANADA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 07期

关键词：

D O I：

10.1149/1.2096132

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1793 / 1796

页数：4

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