Effects of Si3N4 films on diffusion of boron and extended defects in silicon during post-implantation annealing

被引：4

作者：

Zaitsu, Y

Osada, K

Shimizu, T

Matsumoto, S

Yoshida, M

Arai, E

Abe, T

机构：

[1] KYUSYU INST DESIGN, MINAMI KU, FUKUOKA 815, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

[3] SHIN ETSU HANDOTAI CO LTD, SEH R&D CTR, ANNAKA, GUNMA 37901, JAPAN

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-2卷

关键词：

Si3N4; films; enhanced diffusion; extended defects;

D O I：

10.4028/www.scientific.net/MSF.196-201.1891

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of Si3N4 films on anomalous enhanced diffusion of boron and extended defects formation in FZ-Si during post-implantation anealing have been studied. Under Si3N4 films, diffusion of boron is retarded and stacking faults are not formed after annealing. These results suggest that the stress of Si3N4 films decreases self-interstitial concentration near the interface in Si.

引用

页码：1891 / 1895

页数：5

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