HIGH-DOSE CARBON ION-IMPLANTATION STUDIES IN SILICON

被引：13
|
作者：
SRIKANTH, K
CHU, M
ASHOK, S
NGUYEN, N
VEDAM, K
机构：
[1] PENN STATE UNIV,CTR ELECTR MAT & DEVICES,UNIVERSITY PK,PA 16802
[2] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802
来源：
THIN SOLID FILMS | 1988年 / 163卷
关键词：
This work was supported in part by the Penn State Center for the Study of Particle Beam Interaction with Sohds; funded by IBM;
D O I：
10.1016/0040-6090(88)90443-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
10
引用
收藏
页码：323 / 329
页数：7
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