SIMULTANEOUS SI MOLECULAR-BEAM EPITAXY AND HIGH-DOSE ION-IMPLANTATION

被引：4
|
作者：
ISHIKAWA, Y
SHIBATA, N
机构：
[1] Japan Fine Ceramics Center, Nagoya, 456, 2-4-1 Mutsuno, Atsuta-ku
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)80086-R
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A simultaneous homoepitaxial growth and ion implantation process has been proposed. The ion depth profiles obtained from this method, as calculated by the modified Lindhard-Seharff-Schiott (LSS) method taking the homoepitaxial growth into consideration, have shown that the implanted ion depth profile is widely controlled by changing the ratio of epitaxial growth rate to implantation doss rats with constant ion energy. The method is demonstrated by the in-situ Si epitaxial growth during a low-energy separation by implanted oxygen (SIMOX) process on a Si(100) substrate. It is proven that epitaxial Si was grown with a high oxygen dose of (2-6) X 10(17) cm(-2), and that a high quality silicon-on-insulator (SOI) structure was obtained after high-temperature annealing.
引用
收藏
页码：980 / 983
页数：4
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