SUPERCONDUCTING PROPERTIES OF TA-N

被引:3
|
作者
DELILLO, S
MANCINI, F
机构
[1] CNR,GRP NAZL STRUTT MAT,SALERNO,ITALY
[2] UNIV SALERNO,IST FIS,I-84100 SALERNO,ITALY
关键词
D O I
10.1016/0375-9601(76)90799-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:297 / 298
页数:2
相关论文
共 50 条
  • [41] Structure and tribological evolution of Ta-N layer by controlling the time of microwave plasma nitriding
    Li, Jiacheng
    Xu, Zhigang
    Peng, Jian
    Shen, Qiang
    Wang, Chuanbin
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2025, 43 (02):
  • [42] Physical and electrical properties of Ta-N, Mo-N, and W-N electrodes on HfO2 high-k gate dielectric
    Lu, J
    Kuo, Y
    Chatterjee, S
    Tewg, JY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (01): : 349 - 357
  • [43] Effect of Thin Zr Layer Insertion on the Ta-N Diffusion Barrier Performance in Cu Metallization
    Ding Minghui
    Zhang Lili
    Gai Dengyu
    Wang Ying
    RARE METAL MATERIALS AND ENGINEERING, 2009, 38 (11) : 2036 - 2038
  • [44] Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization
    Adams, D
    Malgas, GF
    Theodore, ND
    Gregory, R
    Kim, HC
    Misra, E
    Alford, TL
    Mayer, JW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05): : 2345 - 2352
  • [45] Integration of Ta-N Thin Film Resistors on Anodic Alumina MCM-D Substrate
    Zhu, Dapeng
    Lin, Xiaoqin
    Luo, Le
    JOURNAL OF ELECTRONIC PACKAGING, 2009, 131 (01) : 0110061 - 0110064
  • [46] Reactive diffusion and phase equilibria in the V-C, Nb-C, Ta-C AND Ta-N systems
    Wiesenberger, H
    Lengauer, W
    Ettmayer, P
    ACTA MATERIALIA, 1998, 46 (02) : 651 - 666
  • [47] Effect of thin Zr layer insertion on the Ta-N diffusion barrier performance in Cu metallization
    Ding, Minghui
    Zhang, Lili
    Gai, Dengyu
    Wang, Ying
    Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2009, 38 (11): : 2036 - 2038
  • [48] Growth mechanism of sputter deposited Ta and Ta-N thin films induced by an underlying titanium layer and varying nitrogen flow rates
    Chen, GS
    Chen, ST
    Huang, SC
    Lee, HY
    APPLIED SURFACE SCIENCE, 2001, 169 : 353 - 357
  • [49] Preparation of Ta-N and Ti-N Thin Films as a Capping Layer of CoFeB/MgO Magnetic Tunnel Junctions
    Sugihara, Atsushi
    Osaki, Soichiro
    Nakatani, Ryoichi
    JOURNAL OF THE JAPAN INSTITUTE OF METALS AND MATERIALS, 2013, 77 (09) : 398 - 401
  • [50] Effect of Nitrogen Pressure on the Structure of Cr-N, Ta-N, Mo-N, and W-N Nanocrystals Synthesized by Arc Discharge
    Shen, Longhai
    Wang, Nan
    JOURNAL OF NANOMATERIALS, 2011, 2011