共 50 条
- [42] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE INTERSTITIAL CARBON DEFECT IN SILICON [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6295 - 6297
- [44] Characterisation of deep-level defects in semi-insulating GaAs and InP by high resolution photoinduced transient spectroscopy (HRPITS) [J]. SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 141 - 144
- [45] SINGLE SCAN DEEP-LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4068 - 4070
- [47] Evaluation of dislocation-related defects in GaN using deep-level transient spectroscopy [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2568 - +
- [48] DEEP LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS ON SI-DOPED ALGAAS/GAAS MODFETS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 649 - 649