ELECTRON CHANNELING IN THE SCANNING ELECTRON-MICROSCOPE FOR MONITORING THE THICKNESSES OF RESIDUAL OXIDE-FILMS ON SEMICONDUCTOR SUBSTRATES

被引：0
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作者：
VINOGRADOVA, NS
NOSIKOV, SV
SOROKIN, IN
SOSNOVSKIKH, YN
机构：
来源：
INDUSTRIAL LABORATORY | 1986年 / 52卷 / 12期
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中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
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页码：1107 / 1108
页数：2
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