COMPOSITIONAL DEPENDENCE OF PERMITTIVITY IN QUARTERNARY III-V-SEMICONDUCTOR COMPOUNDS

被引：5

作者：

PAL, BB

机构：

[1] Banaras Hindu Univ, Dep of, Electronics Engineering, Varanasi,, India, Banaras Hindu Univ, Dep of Electronics Engineering, Varanasi, India

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 12期

关键词：

D O I：

10.1016/0038-1101(85)90047-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An empirical relation for the relative permittivity in quarternary III-V semiconductor compound is suggested as a function of composition. The expression for the permittivity of ternary III-V compounds can be obtained from that as a special case which is identical to that already available in the literature. Graphs have been plotted for static and optical permittivities against composition for the quarternary semiconductor In//1// minus //xGa//xAs//yP//1// minus //y and are discussed.

引用

页码：1235 / 1239

页数：5

共 50 条

[41] QUADRUPOLE INTERACTIONS IN III-V SEMICONDUCTOR COMPOUNDS
ANDRIANOV, DG
MURAVLEV, YB
FISTUL, VI
SHEVAKIN, AF
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 895 - 898
[42] IMPORTANCE OF DEFECTS AND DOPANT NATURE IN ALKALI-METAL III-V-SEMICONDUCTOR INTERFACE FORMATION AND PROMOTED OXIDATION
SCHIRM, KM
SOUKIASSIAN, P
MANGAT, PS
HURYCH, Z
SOONCKINDT, L
BONNET, JJ
APPLIED SURFACE SCIENCE, 1993, 68 (03) : 417 - 425
[43] FORMATION OF MICROGRATINGS FOR III-V-SEMICONDUCTOR INTEGRATED OPTOELECTRONICS BY HIGH-VOLTAGE ELECTRON-BEAM LITHOGRAPHY
MCINERNEY, J
FICE, MJ
AHMED, H
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (10) : 1494 - 1501
[44] REAL-SPACE TRANSFER AND HOT-ELECTRON TRANSPORT-PROPERTIES IN III-V-SEMICONDUCTOR HETEROSTRUCTURES
SAKAMOTO, R
AKAI, K
INOUE, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2344 - 2352
[45] Compositional characterization of III-V semiconductor heterostructures by friction force microscopy
Garcia, R
Tamayo, J
Gonzalez, L
Gonzalez, Y
MICRO/NANOTRIBOLOGY AND ITS APPLICATIONS, 1997, 330 : 275 - 282
[46] Fabrication and characterization of III-V semiconductor superlattices with sinusoidal compositional modulation
Liu, X
Sasaki, Y
Titova, LV
Reimer, PM
Lee, S
Furdyna, JK
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 1143 - 1146
[47] A DIRECTION OF EASY DIFFUSION ON THE (001) FACE OF GE, SI AND III-V-SEMICONDUCTOR CRYSTALS - HOW TO VERIFY ITS EXISTENCE
STOYANOV, S
JOURNAL OF CRYSTAL GROWTH, 1989, 94 (03) : 751 - 756
[48] Coherent and ultrafast optoelectronics in III-V semiconductor compounds
Foerst, M.
Nagel, M.
Awad, M.
Waechter, M.
Dekorsy, T.
Kurz, H.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (08): : 2971 - 2987
[49] III-V-semiconductor vertically-coupled whispering-gallery mode resonators made by selective lateral oxidation
Calvez, S.
Lafleur, G.
Arlotti, C.
Larrue, A.
Calmon, P. -F.
Arnoult, A.
Almuneau, G.
Gauthier-Lafaye, O.
LASER RESONATORS, MICRORESONATORS, AND BEAM CONTROL XVIII, 2016, 9727
[50] PROFILES OF ISOTOPES IN III-V-SEMICONDUCTOR COMPOUND FORMED AS A RESULT OF BOMBARDMENT WITH HIGH-ENERGY ALPHA-PARTICLES
DIDIK, VA
KOZLOVSKII, VV
MALKOVICH, RS
SKORYATINA, EA
SEMICONDUCTORS, 1993, 27 (02) : 148 - 149

← 1 2 3 4 5 →