COMPOSITIONAL DEPENDENCE OF PERMITTIVITY IN QUARTERNARY III-V-SEMICONDUCTOR COMPOUNDS

被引：5

作者：

PAL, BB

机构：

[1] Banaras Hindu Univ, Dep of, Electronics Engineering, Varanasi,, India, Banaras Hindu Univ, Dep of Electronics Engineering, Varanasi, India

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 12期

关键词：

D O I：

10.1016/0038-1101(85)90047-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An empirical relation for the relative permittivity in quarternary III-V semiconductor compound is suggested as a function of composition. The expression for the permittivity of ternary III-V compounds can be obtained from that as a special case which is identical to that already available in the literature. Graphs have been plotted for static and optical permittivities against composition for the quarternary semiconductor In//1// minus //xGa//xAs//yP//1// minus //y and are discussed.

引用

页码：1235 / 1239

页数：5

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