SIMULATION OF TRANSIENT PHENOMENA IN N-TYPE SI

被引:0
|
作者
VAVRINA, K
KODES, J
机构
关键词
D O I
10.1002/pssa.2211160162
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K85 / K89
页数:5
相关论文
共 50 条
  • [1] TRANSIENT PHOTOCONDUCTIVITY IN N-TYPE A-SI-H
    MAIN, C
    RUSSELL, R
    BERKIN, J
    MARSHALL, JM
    PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (04) : 189 - 195
  • [2] Experimental study on magnetoresistance phenomena in n-type Si SiGe quantum wires
    van Veen, RG
    Verbruggen, AH
    van der Drift, E
    Schäffler, F
    Radelaar, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (06) : 508 - 516
  • [3] Characterization of Boron Diffusion Phenomena According to the Specific Resistivity of N-Type Si Wafer
    Lee, Woo-Jin
    Choi, Chel-Jong
    Park, Gye-Choon
    Yang, O-Bong
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (02) : 1665 - 1668
  • [4] Comparison of currentline pore growth in n-type InP and in n-type Si
    Cojocaru, Ala
    Leisner, Malte
    Carstensen, Juergen
    Foell, Helmut
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 6, 2011, 8 (06): : 1779 - 1782
  • [5] Study of polarization phenomena in n-type CdZnTe
    Elhadidy, H.
    Dedic, V.
    Franc, J.
    Grill, R.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (05)
  • [6] TRANSPORT PHENOMENA IN N-TYPE LEAD CHALCOGENIDES
    ASKEROV, BM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (01): : 115 - 116
  • [7] NONEQUILIBRIUM CARRIER PHENOMENA IN N-TYPE INSB
    DICK, CL
    ANCKERJO.B
    PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 526 - +
  • [8] DIFFUSION OF AU IN N-TYPE SI
    BADALOV, AZ
    SHUMAN, VB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1137 - &
  • [9] HOPPING CONDUCTION IN N-TYPE SI
    NGUEN, VL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 336 - 337
  • [10] ON THE JET ETCHING OF N-TYPE SI
    SCHMIDT, PF
    KEIPER, DA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (07) : 592 - 596