Comparison of currentline pore growth in n-type InP and in n-type Si

被引：1

作者：

Cojocaru, Ala ^{[1
]}

Leisner, Malte ^{[1
]}

Carstensen, Juergen ^{[1
]}

Foell, Helmut ^{[1
]}

机构：

[1] Univ Kiel, Inst Mat Sci, D-24143 Kiel, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 6 | 2011年 / 8卷 / 06期

关键词：

InP; Si; pore growth; semiconductors; etching; current density;

D O I：

10.1002/pssc.201000034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work the growth of currentline-oriented pores in (100) n-type InP and in (100) n-type Si for different doping concentrations has been studied. The pore morphology of both pore types is very similar, as is the characteristic behavior of the etching current. These similarities strongly indicate, that the underlying growth mechanisms of these pores in InP and Si are the same. A model for the currentline pores in both semiconductors is introduced, focusing on the strong diffusion limitation of species (reactants or products) at the pore tips. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1779 / 1782

页数：4

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