SIMULATION OF TRANSIENT PHENOMENA IN N-TYPE SI

被引：0
|
作者：
VAVRINA, K
KODES, J
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1989年 / 116卷 / 01期
关键词：
D O I：
10.1002/pssa.2211160162
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K85 / K89
页数：5
相关论文
共 50 条
  • [41] Design and fabrication of Si/SiGe n-type MODFETs
    Gluck, M
    Hackbarth, T
    Birk, M
    Haas, A
    Kohn, E
    Konig, U
    PHYSICA E, 1998, 2 (1-4): : 763 - 767
  • [42] Spin drift in highly doped n-type Si
    Kameno, Makoto
    Ando, Yuichiro
    Shinjo, Teruya
    Koike, Hayato
    Sasaki, Tomoyuki
    Oikawa, Tohru
    Suzuki, Toshio
    Shiraishi, Masashi
    APPLIED PHYSICS LETTERS, 2014, 104 (09)
  • [43] Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)
    Teubert, J
    Klar, PJ
    Heimbrodt, W
    Volz, K
    Stolz, W
    Thomas, P
    Leibiger, G
    Gottschalch, V
    APPLIED PHYSICS LETTERS, 2004, 84 (05) : 747 - 749
  • [44] n-type AlN layer by Si ion implantation
    Kanechika, Masakazu
    Kachi, Tetsu
    APPLIED PHYSICS LETTERS, 2006, 88 (20)
  • [45] ANISOTROPY OF ELECTRON-SCATTERING IN N-TYPE SI
    KAZANSKII, AG
    KOSHELEV, OG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 826 - +
  • [46] MAGNETORESISTANCE ANISOTROPIES IN N-TYPE (001) SI ON SAPPHIRE
    OHMURA, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 39 (02) : 549 - 550
  • [47] SCREENING EFFECTS IN N-TYPE SI INVERSION LAYERS
    HIPOLITO, O
    CAMPOS, VB
    PHYSICAL REVIEW B, 1979, 19 (06): : 3083 - 3088
  • [48] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI
    BALKANSKI, M
    AZIZA, A
    AMZALLAG, E
    PHYSICA STATUS SOLIDI, 1969, 31 (01): : 323 - +
  • [49] THERMAL PHONON TRANSPORT IN N-TYPE GE AND SI
    POMERANTZ, M
    PHYSICS LETTERS A, 1967, A 24 (02) : 81 - +
  • [50] DETERMINATION OF THE ANISOTROPY PARAMETER OF THE MOBILITY IN N-TYPE SI
    FEDOSOV, AV
    TIMOSHCHUK, VS
    YASHCHINSKII, LV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 1076 - 1076
12345