LOW-TEMPERATURE ELECTRICAL-CONDUCTIVITY OF SILICON IMPLANTED WITH PHOSPHORUS AND ANTIMONY IONS

被引：0
|
作者：
ABRAMOV, VV
KULBACHINSKII, VA
KYTIN, VG
TIMOFEEV, AB
ULYASHIN, AG
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 05期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electrical conductivity of Si:P, Si:Sb, and Si:Sb:P samples heavily doped by ion implantation was measured in the temperature range 4.2 less-than-or-equal-to T less-than-or-equal-to 300 K. The results were interpreted employing a model allowing for a possible energy dependence of the density of delocalized states in an impurity energy band.
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页码：495 / 497
页数：3
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