LOW-TEMPERATURE ELECTRICAL-CONDUCTIVITY OF SILICON IMPLANTED WITH PHOSPHORUS AND ANTIMONY IONS

The electrical conductivity of Si:P, Si:Sb, and Si:Sb:P samples heavily doped by ion implantation was measured in the temperature range 4.2 less-than-or-equal-to T less-than-or-equal-to 300 K. The results were interpreted employing a model allowing for a possible energy dependence of the density of delocalized states in an impurity energy band.