LOW-TEMPERATURE ELECTRICAL-CONDUCTIVITY OF SILICON IMPLANTED WITH PHOSPHORUS AND ANTIMONY IONS

被引：0
|
作者：
ABRAMOV, VV
KULBACHINSKII, VA
KYTIN, VG
TIMOFEEV, AB
ULYASHIN, AG
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electrical conductivity of Si:P, Si:Sb, and Si:Sb:P samples heavily doped by ion implantation was measured in the temperature range 4.2 less-than-or-equal-to T less-than-or-equal-to 300 K. The results were interpreted employing a model allowing for a possible energy dependence of the density of delocalized states in an impurity energy band.
引用
收藏
页码：495 / 497
页数：3
相关论文
共 50 条
  • [1] Low-temperature conductivity of silicon doped with antimony
    A. K. Fedotov
    I. A. Svito
    V. V. Fedotova
    A. G. Trafimenko
    A. L. Danilyuk
    S. L. Prischepa
    Semiconductors, 2015, 49 : 705 - 711
  • [2] Low-temperature conductivity of silicon doped with antimony
    Fedotov, A. K.
    Svito, I. A.
    Fedotova, V. V.
    Trafimenko, A. G.
    Danilyuk, A. L.
    Prischepa, S. L.
    SEMICONDUCTORS, 2015, 49 (06) : 705 - 711
  • [3] Low-temperature processing of antimony-implanted silicon
    T. Alzanki
    R. Gwilliam
    N. G. Emerson
    B. J. Sealy
    Journal of Electronic Materials, 2004, 33 : 767 - 769
  • [4] Low-temperature processing of antimony-implanted silicon
    Alzanki, T
    Gwilliam, R
    Emerson, NG
    Sealy, BJ
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (07) : 767 - 769
  • [5] LOW-TEMPERATURE ELECTRICAL-CONDUCTIVITY OF OXIDE GLASSES
    LU, X
    JAIN, H
    KANERT, O
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1994, 172 : 1436 - 1440
  • [6] ELECTRICAL-CONDUCTIVITY IN LOW-TEMPERATURE SOLDER POWDERS
    GRIBNYAK, LG
    DENGA, EM
    MARINCHIK, VK
    INORGANIC MATERIALS, 1991, 27 (05) : 815 - 818
  • [7] LOW-TEMPERATURE ELECTRICAL-CONDUCTIVITY OF PURE METALS
    GURZHI, RN
    KOPELIOVICH, AI
    USPEKHI FIZICHESKIKH NAUK, 1981, 133 (01): : 33 - 74
  • [8] ELECTRICAL-CONDUCTIVITY OF LOW-TEMPERATURE CARBONS AS A FUNCTION OF FREQUENCY
    GIUNTINI, JC
    JULLIEN, D
    ZANCHETTA, JV
    CARMONA, F
    DELHAES, P
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 30 (01) : 87 - 98
  • [9] AN ELECTRICAL-CONDUCTIVITY STUDY OF AN SBSI INGOT AT LOW-TEMPERATURE
    PALANIAPPAN, L
    GNANAM, FD
    RAMASAMY, P
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (12) : 790 - 792
  • [10] LOW-TEMPERATURE ELECTRICAL-CONDUCTIVITY OF HEAVILY DOPED SI
    ABRAMOV, VV
    BRANDT, NB
    KULBACHINSKII, VA
    TIMOFEEV, AB
    ULYASHIN, AG
    SHLOPAK, NV
    GOROLCHUK, IG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (03): : 310 - 312
12345