A FLOW CHANNEL REACTOR FOR GAAS VAPOR-PHASE EPITAXY

被引：15

|

作者：

WESTPHAL, GH

SHAW, DW

HARTZELL, RA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90450-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：324 / 331

页数：8

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