A FLOW CHANNEL REACTOR FOR GAAS VAPOR-PHASE EPITAXY

被引：15
|
作者：
WESTPHAL, GH
SHAW, DW
HARTZELL, RA
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期
关键词：
D O I：
10.1016/0022-0248(82)90450-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：324 / 331
页数：8
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