THE NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS OF DOUBLE-BARRIER INTERBAND TUNNELING STRUCTURES

被引：6
|
作者：
HOUNG, MP
WANG, YH
SHEN, CL
机构：
[1] Department of Electrical Engineering, National Cheng-Kung University, Tainan
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 08期
关键词：
D O I：
10.1063/1.349053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The tunneling mechanism responsible for negative differential resistance in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures was studied systematically. It was found that the peak current results from resonant interband tunneling and that the spacers make a significant contribution to the valley current. Furthermore, the optimal thicknesses for the GaSb well and AlSb barriers were predicted to be 65 angstrom and 10 angstrom, respectively, which agrees fairly well with experimental results. Our theoretical results give some useful design principles for this type of interband tunneling device.
引用
收藏
页码：4640 / 4642
页数：3
相关论文
共 50 条
  • [31] RESONANT INTERBAND AND INTRABAND TUNNELING IN INAS/ALSB/GASB DOUBLE-BARRIER DIODES
    HUBER, JL
    REED, MA
    KRAMER, G
    ADAMS, M
    FERNANDO, CJL
    FRENSLEY, WR
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 203 - 208
  • [32] ELECTRON-TUNNELING IN SINGLE-BARRIER AND DOUBLE-BARRIER STRUCTURES
    CHOI, KK
    NEWMAN, PG
    FOLKES, PA
    IAFRATE, GJ
    PHYSICAL REVIEW B, 1989, 40 (11): : 8006 - 8009
  • [33] Dependence of resonant interband tunneling current on barrier and well width in InAs/AlSb/GaSb/AlSb/InAs double-barrier structures
    Kitabayashi, H
    Waho, T
    Yamamoto, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3B): : 1807 - 1810
  • [34] Anomalous negative differential conductance in nanomechanical double barrier tunneling structures
    Majima, Y
    Azuma, Y
    Nagano, K
    APPLIED PHYSICS LETTERS, 2005, 87 (16) : 1 - 3
  • [35] ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS
    WU, JS
    CHANG, CY
    LEE, CP
    CHANG, KH
    LIU, DG
    SOLID-STATE ELECTRONICS, 1991, 34 (04) : 403 - 411
  • [36] NOISE CHARACTERISTICS OF DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES BELOW 10 KHZ
    LI, YP
    ZASLAVSKY, A
    TSUI, DC
    SANTOS, M
    SHAYEGAN, M
    PHYSICAL REVIEW B, 1990, 41 (12): : 8388 - 8391
  • [37] Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
    Bayram, C.
    Vashaei, Z.
    Razeghi, M.
    APPLIED PHYSICS LETTERS, 2010, 97 (18)
  • [38] OBSERVATION OF RESONANT TUNNELING IN INSB/ALINSB DOUBLE-BARRIER STRUCTURES
    SODERSTROM, JR
    YAO, JY
    ANDERSSON, TG
    APPLIED PHYSICS LETTERS, 1991, 58 (07) : 708 - 710
  • [39] DYNAMIC PROPERTIES OF DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES
    CHEN, LY
    TING, CS
    PHYSICAL REVIEW B, 1991, 43 (03): : 2097 - 2105
  • [40] RESONANT-TUNNELING IN LATERALLY CONFINED DOUBLE-BARRIER STRUCTURES
    GOBATO, YG
    BERROIR, JM
    GULDNER, Y
    SOLID STATE COMMUNICATIONS, 1993, 87 (06) : 513 - 515
12345