INTRALEVEL HYBRID RESIST PROCESS FOR THE FABRICATION OF METAL-OXIDE SEMICONDUCTOR-DEVICES WITH SUB-MICRON GATE LENGTHS

被引:0
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作者
HELBERT, JN
SEESE, PA
GONZALES, AJ
WALKER, CC
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D O I
10.1117/12.7973079
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O43 [光学];
学科分类号
070207 ; 0803 ;
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页码:185 / 189
页数:5
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