INTRALEVEL HYBRID RESIST PROCESS FOR THE FABRICATION OF METAL-OXIDE SEMICONDUCTOR-DEVICES WITH SUB-MICRON GATE LENGTHS

被引：0

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作者：

HELBERT, JN

SEESE, PA

GONZALES, AJ

WALKER, CC

机构：

来源：

OPTICAL ENGINEERING | 1983年 / 22卷 / 02期

关键词：

D O I：

10.1117/12.7973079

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

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页码：185 / 189

页数：5

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