DEEP LEVELS IN SEMI-INSULATING LEC GAAS BEFORE AND AFTER SILICON IMPLANTATION

被引：5

作者：

DINDO, S

ABDELMOTALEB, I

LOWE, K

TANG, W

YOUNG, L

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

D O I：

10.1149/1.2113646

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2673 / 2677

页数：5

共 50 条

[41] Photo-induced current spectroscopy study on semi-insulating LEC GaAs
Seghier, D
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (04) : 1071 - 1073
[42] Effect of irradiation on the microhardness of the LEC grown semi-insulating GaAs single crystals
[J]. Journal of Nuclear Materials, 1995, 225 (1-3):
[43] INFLUENCE OF MELT PREPARATION ON RESIDUAL IMPURITY CONCENTRATION IN SEMI-INSULATING LEC GAAS
NISHIO, J
TERASHIMA, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 96 (03) : 605 - 608
[44] Semi-insulating LEC GaAs as a material for radiation detectors: materials science issues
Markov, AV
Mezhennyi, MV
Polyakov, AY
Smirnov, NB
Govorkov, AV
Eremin, VK
Verbitskaya, EM
Gavrin, VN
Kozlova, YP
Veretenkin, YP
Bowles, TJ
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 466 (01): : 14 - 24
[45] UNIFORMITY OF ANNEALED AND BULK-QUENCHED UNDOPED, SEMI-INSULATING, LEC GAAS
CLARK, S
STIRLAND, DJ
BROZEL, MR
SMITH, M
WARWICK, CA
[J]. SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 31 - 36
[46] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY
TAJIMA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04): : L227 - L229
[47] LATTICE BENDING IN LEC-GROWN SEMI-INSULATING GaAs WAFERS.
Yasuami, Shigeru
Mikami, Hitoshi
Hojo, Akimichi
[J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (10): : 1567 - 1569
[48] Complete set of deep traps in semi-insulating GaAs
Pavlovic, M
Desnica, UV
Gladic, J
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (08) : 4563 - 4570
[49] ELLIPSOMETRY AND REFLECTANCE OF ETCHED (100) SURFACES OF UNDOPED, SEMI-INSULATING LEC GAAS
HOSHINO, T
MORITANI, A
NAKAI, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L250 - L253
[50] Complete set of deep traps in semi-insulating GaAs
[J]. 1600, American Institute of Physics Inc. (88):

← 1 2 3 4 5 →