ELLIPSOMETRY AND REFLECTANCE OF ETCHED (100) SURFACES OF UNDOPED, SEMI-INSULATING LEC GAAS

被引：1
|
作者：
HOSHINO, T
MORITANI, A
NAKAI, J
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 05期
关键词：
D O I：
10.1143/JJAP.23.L250
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L250 / L253
页数：4
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