PLASMA-ETCHING OF GAAS WITH CCL2F2 AND ADDITIVE GASES

被引：0
|
作者：
FORTE, AR [1 ]
RATHMAN, DD [1 ]
MAHONEY, LJ [1 ]
机构：
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 09期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C403 / C403
页数：1
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