共 50 条
- [31] ADDITIVE TRACERS FOR RESIST PLASMA-ETCHING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 273 - 277
- [33] ALKANE BASED PLASMA-ETCHING OF GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1449 - 1455
- [34] DIFFUSION-COEFFICIENTS OF THE HALOCARBONS CCL2F2 AND C2CL2F4 WITH SIMPLE GASES JOURNAL OF CHEMICAL AND ENGINEERING DATA, 1991, 36 (02): : 135 - 137
- [35] ABSOLUTE VISCOSITY OF CCL2F2 AND CHCL2F JOURNAL OF MECHANICAL ENGINEERING SCIENCE, 1970, 12 (02): : 135 - +
- [36] PLASMA-ETCHING OF NIOBIUM WITH CF4/O2 GASES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 708 - 711
- [37] CHARACTERIZATION OF THE N-GAAS SURFACE AFTER CF-4, SF6, CCL2F2, AND CCL2F2-O2 PLASMA TREATMENT BY PHOTOREFLECTANCE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 128 (02): : 435 - 446
- [38] Ionization of CCl4 and CCl2F2 by electron impact PLASMA AND FUSION SCIENCE, 2006, 875 : 215 - +
- [39] Dry etching of AlxGa1-xN/GaN by CCl2F2 chemistry for device isolation Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2544 - 2547