A STUDY OF RESIDUAL DOPING LEVELS OF GAAS, GA1-XALXAS AND GA0.47IN0.53AS EPITAXIAL LAYERS FROM ORGANOMETALLIC MOLECULAR-BEAM EPITAXY

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作者：
BENCHIMOL, JL
ALEXANDRE, F
KOBAYASHI, N
ALAOUI, F
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VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1988年 / 43卷 / 241期
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TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
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页码：199 / 200
页数：2
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