CHARACTERIZATION OF GA0.47IN0.53AS AND AL0.48IN0.52AS LAYERS GROWN LATTICE MATCHED ON INP BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

MASSIES, J ^{[1
]}

ROCHETTE, JF ^{[1
]}

ETIENNE, P ^{[1
]}

DELESCLUSE, P ^{[1
]}

HUBER, AM ^{[1
]}

CHEVRIER, J ^{[1
]}

机构：

[1] THOMSON CSF,CENT RES LAB,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90255-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：101 / 107

页数：7

共 50 条

[1] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
WAGNER, WR
JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6328 - 6330
[2] BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
BONNER, WA
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4672 - 4675
[3] SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4411 - 4415
[4] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
DRUMMOND, TJ
MORKOC, H
APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149
[5] TWO-DIMENSIONAL ELECTRON-GAS DENSITY CALCULATION IN GA0.47IN0.53AS/AL0.48IN0.52AS, GA0.47IN0.53AS/INP, AND GA0.47IN0.53AS/INP/AL0.48IN0.52AS HETEROSTRUCTURES
YOON, KS
STRINGFELLOW, GB
HUBER, RJ
JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) : 5915 - 5919
[6] Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
Haupt, M
Ganser, P
Kohler, K
Emminger, S
Muller, S
Rothemund, W
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 89 - 92
[7] MODULATION-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTODETECTOR PREPARED BY MOLECULAR-BEAM EPITAXY
CHEN, CY
PANG, YM
CHO, AY
ALAVI, K
GARBINSKI, PA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 262 - 264
[8] NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY
CAPASSO, F
ALAVI, K
CHO, AY
FOY, PW
BETHEA, CG
APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1040 - 1042
[9] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TEMKIN, H
ALAVI, K
WAGNER, WR
PEARSALL, TP
CHO, AY
APPLIED PHYSICS LETTERS, 1983, 42 (10) : 845 - 847
[10] INTERDIGITATED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS
CHEN, CY
PANG, YM
ALAVI, K
CHO, AY
GARBINSKI, PA
APPLIED PHYSICS LETTERS, 1984, 44 (01) : 99 - 101

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